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Abstract
The global silicon carbide power semiconductor market was valued at USD 628.72 million in 2020, and it is expected to reach USD 4708.71 million by 2026, registering a CAGR of 42.41% during the period 2021-2026.
_x000D_ _x000D_The pandemic outbreak has created economic turmoil for small, medium, and large-scale industries worldwide. Adding to the woes, country-wise lockdown inflicted by the governments across the globe (to minimize the spread of the virus), has further resulted in industries taking a hit and disruption in supply chain and manufacturing operations across the world, as a large part of manufacturing includes the work on the factory floor, where people are in close contact as they collaborate to boost the productivity.
_x000D_ _x000D_The silicon carbide power semiconductor market is highly competitive. It consists of several significant players, including Infineon Technologies AG, Texas Instruments Inc., ST Microelectronics NV, Hitachi Power Semiconductor Device Ltd, NXP semiconductor, Fuji Electric Co. Ltd, Semikron International GmbH, Cree Inc., ON Semiconductor Corporation, Mitsubishi Electric Corporation, and others. These companies are introducing new products, partnerships, and acquisitions, to increase their market share.
_x000D_ _x000D_Content
1 INTRODUCTION
1.1 Study Assumptions and Market Definition
1.2 Scope of the Study
2 RESEARCH METHODOLOGY
3 EXECUTIVE SUMMARY
4 MARKET INSIGHTS
4.1 Market Overview
4.2 Industry Value Chain Analysis
4.3 Industry Attractiveness - Porter's Five Force Analysis
4.3.1 Bargaining Power of Suppliers
4.3.2 Bargaining Power of Consumers
4.3.3 Threat of New Entrants
4.3.4 Intensity of Competitive Rivalry
4.3.5 Threat of Substitutes
4.4 Impact of COVID-19 on the Market
4.5 Technology Snapshot
5 MARKET DYNAMICS
5.1 Market Drivers
5.1.1 Increase in the Demand for Consumer Electronics and Wireless Communications
5.1.2 Growing Demand for Energy-Efficient Battery-Powered Portable Devices
5.2 Market Restraints
5.2.1 Shortage of Silicon Wafers and Variable Driving Requirements
6 MARKET SEGMENTATION
6.1 By End-user Industry
6.1.1 Automotive
6.1.2 Consumer Electronics
6.1.3 IT and Telecommunication
6.1.4 Military and Aerospace
6.1.5 Power
6.1.6 Industrial
6.1.7 Other End-user Industries
6.2 By Geography
6.2.1 North America
6.2.2 Europe
6.2.3 Asia Pacific
6.2.4 Rest of the World
7 COMPETITIVE LANDSCAPE
7.1 Company Profiles
7.1.1 Infineon technologies AG
7.1.2 Texas instruments Inc.
7.1.3 ST Microelectronics NV
7.1.4 NXP semiconductor
7.1.5 ON Semiconductor Corporation
7.1.6 Renesas Electronic Corporation
7.1.7 Broadcom Limited
7.1.8 Hitachi Power Semiconductor Device Ltd
7.1.9 Toshiba Corporation
7.1.10 Mitsubishi Electric Corporation
7.1.11 Fuji Electric Co. Ltd
7.1.12 Semikron International
7.1.13 Cree Inc.
8 INVESTMENT ANALYSIS
9 FUTURE OF THE MARKET
The global silicon carbide power semiconductor market was valued at USD 628.72 million in 2020, and it is expected to reach USD 4708.71 million by 2026, registering a CAGR of 42.41% during the period 2021-2026.
The pandemic outbreak has created economic turmoil for small, medium, and large-scale industries worldwide. Adding to the woes, country-wise lockdown inflicted by the governments across the globe (to minimize the spread of the virus), has further resulted in industries taking a hit and disruption in supply chain and manufacturing operations across the world, as a large part of manufacturing includes the work on the factory floor, where people are in close contact as they collaborate to boost the productivity.
The silicon carbide power semiconductor market is highly competitive. It consists of several significant players, including Infineon Technologies AG, Texas Instruments Inc., ST Microelectronics NV, Hitachi Power Semiconductor Device Ltd, NXP semiconductor, Fuji Electric Co. Ltd, Semikron International GmbH, Cree Inc., ON Semiconductor Corporation, Mitsubishi Electric Corporation, and others. These companies are introducing new products, partnerships, and acquisitions, to increase their market share.
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